 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MBR6045 Chips for Schottky Diodes Chip Specification General Description: Schottky Diode chips with Mo-barrier for switch mode power rectifiers with the following features: * Guard-ring for stress protection * Extremely low forward voltage * 125 operation junction temperature * reverse avalanche behavior Mechanical Data: MBR6045 passivated Silicon Chip Dimension(mil): 200X200 mil Thickness: 350 +- 20 m Metallization: Top ( Anode ) : AlAg Bottom ( Cathode) : TiNiAg Forward Current (A): Reverse Voltage (V): Type MBR6045 60A >45V Chip size(mil) VF(V)@25 C at If =60A VF(V)@125 C at If =60A IRM@VRMM at 25 C 200X200 690mV 600mV 0,6mA * expected value for recommended assembling with both side soldering Typical device :1N6392 Note: Other voltages & Top Metal AL are available |
Price & Availability of MBR6045
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |